Custom Silicon Carbide Ceramic Parts & Components (SiC)
Specialized mid-to-backend ultra-precision diamond grinding and lapping of Sintered and Reaction-Bonded SiC. Overcoming extreme material hardness to deliver high thermal conductivity and zero-warp flat surfaces.
Request a QuoteView Machining Capabilities1350°C
Max Service Temp
Strategic Manufacturing Advantage
By pairing advanced grinding machinery with strong pre-forming supply partners, we focus on delivering large-scale flat SiC components with strict flatness tolerances and excellent erosion resistance.
Key Material Properties
Quantitative engineering data for design validation and material selection
Why Choose Silicon Carbide?
Silicon Carbide (SiC) delivers unmatched performance in extreme environments:
Precision Silicon Carbide Ceramic Parts
High-Value Applications
Proven performance in semiconductor equipment, severe industrial environments, and advanced automation
Semiconductor Equipment
Severe Industrial Environments
Advanced Automation
Typical Mechanical & Thermal Properties
Reference data for Sintered Silicon Carbide at room temperature
| Property | Test Method | Unit | Value |
|---|---|---|---|
| Density | ISO 2738 | g/cm³ | 3.12 |
| Flexural Strength | ISO 14704 | MPa | 400 |
| Young’s Modulus | ISO 17561 | GPa | 405 |
| Vickers Hardness | ISO 6507 | HV0.5 | ≥ 2200 |
| Fracture Toughness | ISO 23146 | MPa·m½ | 3.5 – 4.5 |
| Thermal Conductivity | ISO 22007 | W/m·K | 120 |
| Coefficient of Thermal Expansion | ISO 11372 | x10⁻⁶/K | 4.0 – 4.5 |
| Dielectric Strength | IEC 60243 | kV/mm | ≥ 15 |
| Volume Resistivity | IEC 60243 | Ω·cm | > 10¹⁰ |
| Max Service Temperature | Continuous | °C | 1350 |
Precision Machining Capabilities for SiC
Overcoming extreme hardness through advanced diamond grinding and lapping expertise
Large-Scale Flat Grinding
Precision surface grinding of large SiC plates (up to 500mm diameter) with flatness tolerances ≤ 0.002 mm, critical for wafer chucks and electrostatic chuck bases.
Ultra-Precision Lapping
Sequential diamond lapping achieving Ra 0.02 μm surface finish, eliminating subsurface damage and ensuring perfect planarity for vacuum sealing interfaces.
Complex Profile Grinding
CNC profile grinding for intricate geometries, stepped features, and angled surfaces using custom diamond wheel dressing and form compensation.
Thin-Wall Machining
Precision grinding of thin-wall SiC structures (down to 1.0 mm wall thickness) without fracture, enabled by optimized feed rates and coolant delivery.
Zero-Warp Processing
Stress-relief annealing and symmetric grinding strategies prevent warpage, maintaining dimensional stability through complete machining cycle.
Full Metrology Validation
100% flatness verification using laser interferometry and optical flats, with comprehensive FAI/OQC documentation including surface roughness measurements.
Validate Your Silicon Carbide Component Design with KoreCera
Submit your 2D engineering blueprints or 3D CAD files (.STEP / .IGS) below. Our expert engineering team will conduct an in-depth Design-for-Manufacturability (DFM) review and deliver a competitive direct-factory quote. Fast-track prototyping completed within 7-10 business days. Full FAI, OQC, and material traceability reports provided upon delivery.
100% Strict NDA Protection Enforced
Submit Drawing for 24-Hour ReviewReady to Start Your Ceramic Component Project?
Send us your 2D drawings, 3D CAD files (.STEP / .IGS) or physical samples. Our engineering team will review manufacturability and return a competitive direct-factory quotation. Full NDA protection.
Email: james@korecera.com
Submit Your Drawing